Installation type | Base installation |
packing | pipe |
series | - |
Part status | On sale |
working temperature | -40°C ~ 175°C(TJ) |
Encapsulation/Housing | module |
Warehouse | China/Hong Kong |
quality | Original genuine |
Power - maximum | 2778W(Tc) |
FET Type | 2 N Channel(phase angle) |
Drain source voltage (Vdss) | 1200V(1.2kV) |
Current at 25 ° C - continuous drain (Id) | 631A(Tc) |
On resistance (maximum) for different Ids and Vgs | 3.4 mΩ @ 500A,20V |
Vgs (th) (maximum) for different Ids | 4V @ 150mA |
Gate charge (Qg) at different Vgs (maximum) | 1610nC @ 20V |
Input capacitance at different Vds (Ciss) (maximum) | 27900pF @ 1000V |
FET function | SiC |